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vishay semiconductors tlmg/h/o/p/y310. document number 83032 rev. 1.8, 12-sep-07 www.vishay.com 1 standard smd led plcc-2 features ? smd leds with exceptional brightness ? luminous intensity categorized ? compatible with automatic placement equipment ? eia and ice standard package ? compatible with infrared, vapor phase and wave solder processes according to cecc ? available in 8 mm tape ? low profile package ? non-diffused lens: exce llent for coupling to light pipes and backlighting ? low power consumption ? luminous intensity ratio in one packaging unit i vmax /i vmin 1.6 ? lead (pb)-free device 94 8 553 e3 description these devices have been designed to meet the increasing demand for surface mounting technology. the package of the tlm.310. is the plcc-2 (equivalent to a size b tantalum capacitor). it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled up with clear epoxy. product group and package data ? product group: led ? package: smd plcc-2 ? product series: standard ? angle of half intensity: 60 applications ? automotive: backlighting in dashboards and switches ? telecommunication: indicator and backlighting in telephone and fax ? indicator and backlight for audio and video equipment ? indicator and backlight in office equipment ? flat backlight for lcds , switches and symbols ? general use parts table part color, luminous intensity technology tlmh3100 red, i v > 2.5 mcd gaasp on gap tlmh3101 red, i v = (4 to 12.5) mcd gaasp on gap tlmh3102 red, i v = (6.3 to 20) mcd gaasp on gap tlmo3100 soft orange, i v > 2.5 mcd gaasp on gap tlmo3101 soft orange, i v = (4 to 12.5) mcd gaasp on gap TLMY3100 yellow, i v > 2.5 mcd gaasp on gap tlmy3102 ye l l o w, i v = (6.3 to 20) mcd gaasp on gap tlmg3100 green, i v > 4 mcd gap on gap tlmg3102 green, i v = (10 to 20) mcd gap on gap tlmg3105 green, i v = (6.3 to 20) mcd gap on gap tlmp3100 pure green, i v > 1 mcd gap on gap tlmp3101 pure green, i v = (1.6 to 5) mcd gap on gap tlmp3107 pure green, i v = (2.5 to 5) mcd gap on gap tlmp3102 pure green, i v = (2.5 to 8) mcd gap on gap
www.vishay.com 2 document number 83032 rev. 1.8, 12-sep-07 vishay semiconductors tlmg/h/o/p/y310. note: 1) t amb = 25 c, unless otherwise specified note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax /i vmin 1.6 note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax /i vmin 1.6 absolute maximum ratings 1) tlmg310. ,tlmh310. tlmo310. ,tlmp310. ,tlmy310 parameter test condition symbol value unit reverse voltage v r 6v dc forward current t amb 60 c i f 30 ma surge forward current t p 10 s i fsm 0.5 a power dissipation t amb 60 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w optical and electrical characteristics 1) tlmh310., red parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 10 ma tlmh3100 i v 2.5 6 mcd tlmh3101 i v 412.5mcd tlmh3102 i v 6.3 20 mcd dominant wavelength i f = 10 ma d 612 625 nm peak wavelength i f = 10 ma p 635 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 22.8v reverse voltage i r = 10 a v r 615 v junction capacitance v r = 0, f = 1 mhz c j 15 pf optical and electrical characteristics 1) tlm0310., soft orange parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 10 ma tlmo3100 i v 2.5 8 mcd tlmo3101 i v 412.5mcd dominant wavelength i f = 10 ma d 598 611 nm peak wavelength i f = 10 ma p 605 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 22.8v reverse voltage i r = 10 a v r 615 v junction capacitance v r = 0, f = 1 mhz c j 15 pf
document number 83032 rev. 1.8, 12-sep-07 www.vishay.com 3 vishay semiconductors tlmg/h/o/p/y310. note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax /i vmin 1.6 note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax /i vmin 1.6 note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax /i vmin 1.6 optical and electrical characteristics 1) tlmy310., yellow parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 10 ma TLMY3100 i v 2.5 6 mcd tlmy3102 i v 6.3 20 mcd dominant wavelength i f = 10 ma d 581 594 nm peak wavelength i f = 10 ma p 585 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 2.1 2.8 v reverse voltage i r = 10 a v r 615 v junction capacitance v r = 0, f = 1 mhz c j 15 pf optical and electrical characteristics 1) tlmg310., green parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 10 ma tlmg3100 i v 49 mcd tlmg3102 i v 10 20 mcd tlmg3105 i v 6.3 20 mcd dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 2.2 2.8 v reverse voltage i r = 10 a v r 615 v junction capacitance v r = 0, f = 1 mhz c j 15 pf optical and electrical characteristics 1) tlmp310., pure green parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 10 ma tlmp3100 i v 14 mcd tlmp3101 i v 1.6 5 mcd tlmp3102 i v 2.5 8 mcd tlmp3107 i v 2.5 5 mcd dominant wavelength i f = 10 ma d 555 565 nm peak wavelength i f = 10 ma p 555 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 2.1 2.8 v reverse voltage i r = 10 a v r 615 v junction capacitance v r = 0, f = 1 mhz c j 15 pf
www.vishay.com 4 document number 83032 rev. 1.8, 12-sep-07 vishay semiconductors tlmg/h/o/p/y310. typical characteristics t amb = 25 c, unless otherwise specified figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature for ingan figure 3. pulse forward current vs. pulse duration 100 8 0 60 40 0 25 50 75 100 125 p- po w er dissipation (m w ) v t am b - am b ient temperat u re (c) 95 10904 20 0 0 10 20 30 40 60 i f - for w ard c u rrent (ma) 95 10905 50 t am b - am b ient temperat u re (c) 100 8 0 60 40 20 0 0.01 0.1 1 10 1 10 100 1000 10000 t p - p u lse length (ms) 100 95 99 8 5 i - for w ard c u rrent (ma) f dc t p /t = 0.005 0.5 0.2 0.1 0.01 0.05 0.02 t am b < 60 c figure 4. rel. luminous intensity vs. angular displacement figure 5. forward current vs. forward voltage figure 6. rel. luminous intens ity vs. ambient temperature 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity 0.1 1 10 100 v f - for w ard v oltage ( v ) 5 4 3 2 95 99 8 9 i - for w ard c u rrent (ma) f red 1 0 0 0.4 0. 8 1.2 1.6 2.0 100 95 9993 i - relati v el u mino u s intensity v rel t am b - am b ient temperat u re (c) 0 204060 8 0 red
document number 83032 rev. 1.8, 12-sep-07 www.vishay.com 5 vishay semiconductors tlmg/h/o/p/y310. figure 7. rel. lumin. intensity vs. forw. current/duty cycle figure 8. relative luminous intensity vs. forward current figure 9. relative intensity vs. wavelength 10 20 50 100 200 0 0.4 0. 8 1.2 1.6 2 . 4 95 10321 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 i v rel - relati v e l u mino u s intensity red 0.01 0.1 1 10 i f - for w ard c u rrent (ma) 100 10 1 95 9995 i- relati v e l u mino u s intensity v rel red 590 610 630 650 670 0 0.2 0.4 0.6 0. 8 1.2 690 95 10040 - w a v elength (nm) 1.0 red i - relati v e l u mino u s intensity v r el figure 10. forward current vs. forward voltage figure 11. rel. luminous intensity vs. ambient temperature figure 12. rel. lumin. intensity vs. forw. current/duty cycle 0.1 1 10 100 95 9990 i- for w ard c u rrent (ma) f soft orange v f - for w ard v oltage ( v ) 5 4 3 2 1 0 95 9994 soft orange 0 0.4 0. 8 1.2 1.6 2.0 100 i v rel - relati v e l u mino u s intensity t am b - am b ient temperat u re (c) 0204060 8 0 95 10259 soft orange 10 20 50 100 200 0 0.4 0. 8 1.2 1.6 2.4 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 i - relati v e l u mino u s intensity v r el
www.vishay.com 6 document number 83032 rev. 1.8, 12-sep-07 vishay semiconductors tlmg/h/o/p/y310. figure 13. relative luminous intensity vs. forward current figure 14. relative intensity vs. wavelength figure 15. forward current vs. forward voltage 0.01 0.1 1 10 100 1 10 i f - for w ard c u rrent (ma) 95 9997 i - relati v e l u mino u s intensity v rel soft orange 95 10324 soft orange 570 590 610 630 650 0 0.2 0.4 0.6 0. 8 1.2 670 - w a v elength (nm) 1.0 i - relati v e l u mino u s intensity v rel yello w 0.1 1 10 100 95 99 8 7 v f - for w ard v oltage ( v ) i- for w ard c u rrent (ma) f 5 2 1 034 figure 16. rel. luminous intensity vs. ambient temperature figure 17. rel. lumin. intensity vs. forw. current/duty cycle figure 18. relative luminous intensity vs. forward current yello w 0 0.4 0. 8 1.6 1.2 2.0 95 9992 i- relati v el u mino u s intensity v rel t am b - am b ient temperat u re (c) 20 40 60 8 0 0 100 yello w 10 20 50 100 200 0 0.4 0. 8 1.2 1.6 2.4 95 10260 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i - relati v e l u mino u s intensity v rel 2.0 yello w i f - for w ard c u rren t (ma) 100 0.01 0.1 1 10 95 9999 i- relati v e l u mino u s intensity v rel 10 1
document number 83032 rev. 1.8, 12-sep-07 www.vishay.com 7 vishay semiconductors tlmg/h/o/p/y310. figure 19. relative intensity vs. wavelength figure 20. forward current vs. forward voltage figure 21. rel. luminous intensity vs. ambient temperature 550 570 590 610 630 0 0.2 0.4 0.6 0. 8 1.2 650 95 10039 - w a v elength (nm) 1.0 yello w i v rel - relati v e l u mino u s intensity green 0.1 1 10 100 v f - for w ard v oltage ( v ) i- for w ard c u rrent (ma) f 5 2 1 03 95 99 8 6 4 green 0 0.4 0. 8 1.6 1.2 2.0 95 10320 i- relati v el u mino u s intensity v rel t am b -am b ient temperat u re (c) 20 40 60 8 0 0 100 figure 22. specific luminous intensity vs. forward current figure 23. relative luminous intensity vs. forward current figure 24. relative intensity vs. wavelength 10 20 50 100 200 0 0.4 0. 8 1.2 1.6 2.4 95 10263 500 v rel 2.0 green i - specific l u mino u s intensity i f (ma) 0.5 0.2 0.1 0.05 0.02 1 t p /t green i f - for w ard c u rrent (ma) 100 0.01 0.1 1 10 95 9996 i- relati v el u mino u s intensity v rel 10 1 520 540 560 5 8 0 600 0 0.2 0.4 0.6 0. 8 1.2 620 95 1003 8 - w a v elength (nm) 1.0 green i - relati v e l u mino u s intensity v rel
www.vishay.com 8 document number 83032 rev. 1.8, 12-sep-07 vishay semiconductors tlmg/h/o/p/y310. figure 25. forward current vs. forward voltage figure 26. rel. luminous intens ity vs. ambient temperature figure 27. specific luminous intensity vs. forward current 02 0.1 1 10 100 5 95 99 88 p u re green f i - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) 13 4 0 0.4 0. 8 1.2 1.6 2.0 95 9991 p u re green i - relati v e l u mino u s intensity v rel t am b - am b ient temperat u re (c) 0 100 8 0 60 40 20 95 10261 10 1000 100 0 0.4 0. 8 1.2 1.6 2.4 2.0 p u re green i - specific l u mino u s fl u x spec i f - for w ard c u rrent (ma) figure 28. relative luminous intensity vs. forward current figure 29. relative intensity vs. wavelength 0.01 0.1 1 10 100 10 1 95 999 8 p u re green i - relati v e l u mino u s intensity v rel i f - for w ard c u rrent (ma) 500 520 540 560 5 8 0 0 0.2 0.4 0.6 0. 8 1.2 600 95 10325 1.0 p u re green - w a v elength (nm) i - relati v e l u mino u s intensity v rel
document number 83032 rev. 1.8, 12-sep-07 www.vishay.com 9 vishay semiconductors tlmg/h/o/p/y310. package dimensions in millimeters 95 11314-1 mounting pad layout 3.5 0.2 0.9 1.75 0.10 pin identification 2. 8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2. 8 ) 1.6 (1.9) 4 4 area co v ered w ith solder resist technical dra w ings according to di n specifications dra w ing- n o.: 6.541-5025.01-4 iss u e: 8 ; 22.11.05 ca
www.vishay.com 10 document number 83032 rev. 1.8, 12-sep-07 vishay semiconductors tlmg/h/o/p/y310. ozone depletin g substances poli cy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employee s and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cle an air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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